논문 국내 국내전문학술지(KCI급) 대기압 유전체배리어방전으로 합성 및 산화 처리된 SiOxCy(-H) 박막의 부식방지 특성
- 학술지 구분 국내전문학술지(KCI급)
- 게재년월 2020-10
- 저자명 김윤기
- 학술지명 한국표면공학회지
- 발행처명 한국표면공학회
- 발행국가 국내
- 논문언어 한국어
홈페이지논문 초록 (Abstract)
A SiOxCy(-H) thin film was synthesized by atmospheric pressure dielectric barrier discharge(APDBD), and a SiO2-like layer was formed on the surface of the film by oxidation treatment using oxygen plasma. Hexamethylcyclotrisiloxane was used as a precursor for the SiOxCy(-H) synthesis, and He gas was used for stabilizing APDBD. Oxygen permeability was evaluated by forming an oxidized SiOxCy(-H) thin film on a PET film. When the single-layer oxidized SiOxCy(-H) film was coated on the PET, the oxygen gas permeability decreased by 46% compared with bare PET. In case of three-layer oxidized SiOxCy(-H) film, the oxygen gas permeability decreased by 73%. The oxygen permeability was affected by the thickness of the SiO2-like layer formed by oxidation treatment rather than the thickness of the SiOxCy(-H) film. The excellent corrosion resistance was demonstrated by coating an oxidized SiOxCy(-H) thin film on the silver-coated aluminum PCB for light emitting diode (LED).