논문 국내 국제전문학술지(SCI급) A Wideband Inductorless LNA for Inter-band and Intra-band Carrier Aggregation in LTE-Advanced and 5G
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2019-09
- 저자명 이동호,김주성,GYAANG RAYMOND
- 학술지명 전기전자학회논문지
- 발행처명 한국전기전자학회
- 발행국가 국내
- 논문언어 외국어
- 전체저자수 3
홈페이지논문 초록 (Abstract)
This paper presents a wideband low noise amplifier (LNA) that is suitable for LTE-Advanced and 5Gcommunication standards employing carrier aggregation (CA). The proposed LNA encompasses a common inputstage and a dual output second stage with a buffer at each distinct output. This architecture is targeted to operatein both intra-band (contiguous and non-contiguous) and inter-band CA. In the proposed design, the input andsecond stages employ a gm enhancement with resistive feedback technique to achieve self-biasing, enhanced gain,wide bandwidth as well as reduced noise figure of the proposed LNA. An up/down power controller controls thesingle input single out (SISO) and single input multiple outputs (SIMO) modes of operation for inter-band andintra-band operations. The proposed LNA is designed with a 45nm CMOS technology. For SISO mode of operation,the LNA operates from 0.52GHz to 4.29GHz with a maximum power gain of 17.77dB, 2.88dB minimum noise figureand input (output) matching performance better than -10dB. For SIMO mode of operation, the proposed LNAoperates from 0.52GHz to 4.44GHz with a maximum voltage gain of 18.30dB, a minimum noise figure of 2.82dBwith equally good matching performance. An IIP3 value of -6.7dBm is achieved in both SISO and SIMO operations.with a maximum current of 42mA consumed (LNA+buffer in SIMO operation) from a 1.2V supply.