논문 국내 국제전문학술지(SCI급) InGaZnO 용액의 농도가 Drop-casting으로 제작된 산화물 박막 트랜지스터의 전기적 특성에 미치는 영향
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2020-09
- 저자명 김민회,노은경,유경민
- 학술지명 센서학회지
- 발행처명 한국센서학회
- 발행국가 국내
- 논문언어 한국어
- 전체저자수 3
홈페이지논문 초록 (Abstract)
Drop casting, a solution process, is a simple low-cost fabrication technique that does not waste material. In this study, we elucidate the effect of the concentration of a InGaZnO solution on the electrical properties of drop-cast oxide thin-film transistors. The higher the concentration the larger the amount of remnant InGaZnO solutes, which yields a thicker thin film. Accordingly, the electrical properties were strongly dependent on the concentration. At a high concentration of 0.3 M (or higher), a large current flowed but did not lead to switching characteristics. At a concentration lower than 0.01 M, switching characteristics were observed, but the mobility was small.In addition to a high mobility, sufficient switching characteristics were obtained at a concentration of 0.1 M owing to the appropriate thickness of the semiconductor layer. This study provides a technical basis for the low-cost fabrication of switching devices capable of driving a sensor array.