논문 해외 국제전문학술지(SCI급) Frequency-Locked RF Power Oscillator With 43-dBm Output Power and 58% Efficiency
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2021-04
- 저자명 김주성,조건희,Cuong Huynh,Luan Nguyen,Thinh Nguyen,Huan Nguyen,김학성,정기상,이상훈
- 학술지명 IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
- 발행처명 IEEE XPLORE
- 발행국가 해외
- 논문언어 외국어
홈페이지논문 초록 (Abstract)
This article presents the frequency-locked high-power RF oscillator using a gallium nitride (GaN) high electron mobility transistor (HEMT) amplifier and phase-locked loop (PLL) for 2.4-GHz industrial, scientific, and medical (ISM) band applications. The proposed architecture exploits the GaN power amplifier in the positive-feedback loop, whereas the desired phase shift for the target oscillating frequency is regulated from the PLL. To the best of our knowledge, this work is the first to employ the frequency locking scheme for a high-power solid-state RF oscillator. A detailed analysis of the oscillation conditions and the efficiency is provided. The prototype circuit is implemented with hybrid phase shifters and a fractional- N frequency synthesizer. The implemented RF oscillator circuit operates from 2.3 to 2.575 GHz and achieves a low phase noise of -131.8 dBc/Hz at a 1-MHz offset frequency. The power efficiency of the proposed oscillator reaches 58%, and the PLL incurs only 0.2% efficiency degradation.