논문 해외 국제전문학술지(SCI급) Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2023-02
- 저자명 Yeongkwon Kim, Seung-Bae Jeon, Byung Chul Jang
- 학술지명 Nanomaterials
- 발행처명 MDPI
- 발행국가 해외
- 논문언어 외국어
홈페이지논문 초록 (Abstract)
Memristive logic-in-memory circuits can provide energy- and cost-efficient computing, which is essential for artificial intelligence-based applications in the coming Internet-of-things era. Although memristive logic-in-memory circuits have been previously reported, the logic architecture requiring additional components and the non-uniform switching of memristor have restricted demonstrations to simple gates. Using a nanoscale graphene oxide (GO) nanosheets-based memristor, we demonstrate the feasibility of a non-volatile logic-in-memory circuit that enables normally-off in-memory computing. The memristor based on GO film with an abundance of unusual functional groups exhibited unipolar resistive switching behavior with reliable endurance and retention characteristics, making it suitable for logic-in-memory circuit application. In a state of low resistance, temperature-dependent resistance and I-V characteristics indicated the presence of a metallic Ni filament. Using memristor-aided logic (MAGIC) architecture, we performed NOT and NOR gates experimentally. Additionally, other logic gates such as AND, NAND, and OR were successfully implemented by combining NOT and NOR universal logic gates in a crossbar array. These findings will pave the way for the development of next-generation computer systems beyond the von Neumann architecture, as well as carbon-based nanoelectronics in the future.