논문 해외 국제전문학술지(SCI급) Triple-Node FinFET with Non-Ohmic Schottky Junctions for Synaptic Devices
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2023-01
- 저자명 Ji-Man Yu, Seong-Yeon Kim, Jin-Ki Kim, Joon-Kyu Han, Seung-Bae Jeon, Yang-Kyu Choi
- 학술지명 IEEE Electron Device Letters
- 발행처명 IEEE XPLORE
- 발행국가 해외
- 논문언어 외국어
홈페이지논문 초록 (Abstract)
A triple-node FinFET (TriNo-FinFET) with non-ohmic Schottky junctions is demonstrated for an artificial synapse. The three mechanisms of thermionic emission in a subthreshold region, tunneling in a transition region, and drift transport in an inversion region are utilized in the TriNo-FinFET with non-ohmic Schottky junctions. The transition region dominated by tunneling with non-ohmic Schottky junctions improves the linearity of potentiation and depression. An average recognition rate of 90 % for handwritten digits in the MNIST dataset is achieved. Moreover, the TriNo-FinFET with the double-layered charge trap layer (CTL) shows enhanced weight-update speed by up to 48-fold compared to that with a single-layered CTL.