논문 해외 국제전문학술지(SCI급) A Vertical Single Transistor Neuron with Core–Shell Dual-Gate for Excitatory–Inhibitory Function and Tunable Firing Threshold Voltage
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2022-10
- 저자명 Taegoon Lee, Seung-Bae Jeon, Daewon Kim
- 학술지명 Micromachines
- 발행처명 MDPI
- 발행국가 해외
- 논문언어 외국어
홈페이지논문 초록 (Abstract)
A novel inhibitable and firing threshold voltage tunable vertical nanowire (NW) single transistor neuron device with core–shell dual-gate (CSDG) was realized and verified by TCAD simulation. The CSDG NW neuron is enclosed by an independently accessed shell gate and core gate to serve an excitatory–inhibitory transition and a firing threshold voltage adjustment, respectively. By utilizing the shell gate, the firing of specific neuron can be inhibited for winner-takes-all learning. It was confirmed that the independently accessed core gate can be used for adjustment of the firing threshold voltage to compensate random conductance variation before the learning and to fix inference error caused by unwanted synapse conductance change after the learning. This threshold voltage tuning can also be utilized for homeostatic function during the learning process. Furthermore, a myelination function which controls the transmission rate was obtained based on the inherent asymmetry between the source and drain in vertical NW structure. Finally, using the CSDG NW neuron device, a letter recognition test was conducted by SPICE simulation for a system-level validation. This multi-functional neuron device can contribute to construct a high-density monolithic SNN hardware combining with the previously developed vertical synapse MOSFET devices.