논문 해외 국제전문학술지(SCI급) First Demonstration of a Logic-process Compatible Junctionless Ferroelectric FinFET Synapse for Neuromorphic Applications
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2018-07
- 저자명 Myungsoo Seo, Min-Ho Kang, Seung-Bae Jeon, Hagyoul Bae, Jae Hur, Byung Chul Jang, Seokjung Yun, Seongwoo Cho, Wu-Kang Kim, Myung-Su Kim, Kyu-Man Hwang, Sengbum Hong, Sung-Yool Choi, and Yang-Kyu Choi
- 학술지명 IEEE Electron Device Letters
- 발행처명 IEEE XPLORE
- 발행국가 해외
- 논문언어 외국어
홈페이지논문 초록 (Abstract)
A highly scalable synapse device based on a junctionless (JL) ferroelectric (FE) FinFET is presented for neuromorphic applications. The synaptic behaviors of the JL metal-ferroelectric-insulator-silicon FinFET were experimentally demonstrated after verifying the ferroelectric characteristics of the HfZrO X (HZO) film using a metal-ferroelectric-metal capacitor. The fabricated synapse showed distinguishable polarization switching behaviors with gradually controllable channel conductance. From neural network simulations using the proposed JL FE FinFET as synapses, the pattern recognition accuracy for hand-written digits was validated to be approximately 80% for neuromorphic applications.