논문 해외 국제전문학술지(SCI급) A Comparative Study on Hot-Carrier Injection in 5-story Vertically Integrated Inversion-Mode and Junctionless-Mode Gate-All-Around MOSFETs
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2018-01
- 저자명 Seong-Yeon Kim, Byung-Hyun Lee, Jae Hur, Jun-Young Park, Seung-Bae Jeon, Seung-Wook Lee, and Yang-Kyu Choi
- 학술지명 IEEE Electron Devices Letters
- 발행처명 IEEE XPLORE
- 발행국가 해외
- 논문언어 외국어
홈페이지논문 초록 (Abstract)
The hot-carrier degradation of the junctionless mode (JM) and the inversion mode (IM) of five-story vertically integrated gate-all-around (GAA) MOSFETs is investigated for the first time. It is found that the degradation of drain current induced by the hot-carrier injection (HCI) in the JM-FET is less than that in the IM-FET for the same dimensions and bias conditions, because of the bulk conduction mechanism of the JM-FET, which is in contrast to surface conduction of the IM-FET. The results are obtained using electrical measurements and numerical simulations. The analysis of how HCI affects the lifetime reliability of vertically integrated GAA MOSFETs is of great importance for ultimate scaling of the silicon transistor.