논문 해외 국제전문학술지(SCI급) Low-Frequency Noise Characteristics in SONOS Flash Memory with Vertically Stacked Nanowire FETs
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2016-11
- 저자명 Tewook Bang†, Byung-Hyun Lee†, Choong-Ki Kim, Dae-Chul Ahn, Seung-Bae Jeon, Min-Ho Kang, Jae-Sub Oh, and Yang-Kyu Choi
- 학술지명 IEEE Electron Device Letters
- 발행처명 IEEE XPLORE
- 발행국가 해외
- 논문언어 외국어
홈페이지논문 초록 (Abstract)
Low-frequency (LF) noise in a vertically stacked nanowire (VS-NW) memory device, which is based on the silicon-oxide-nitride-oxide-silicon (SONOS) configuration is characterized in two different operational modes, an inversion-mode and a junctionless-mode (JM). The LF noise showed 1/f -shape behavior regardless of the operational mode and followed the carrier number fluctuation model. With regard to the device-to-device variation and quality degradation of the LF noise after iterative program/erase operations, the five-story JM SONOS memory showed comparatively high immunity arising from its inherent bulk conduction and no-junction feature. Despite the harsh fabrication condition used to construct five-story VS-NW, even the five-story JM SONOS memory exhibited LF noise characteristics comparable to those of one-story JM SONOS memory. Thus, the five-story JM SONOS memory is attractive due to its high-performance capabilities and good scalability