논문 해외 국제전문학술지(SCI급) Electrothermal Annealing (ETA) Method to Enhance the Electrical Performance of Amorphous-Oxide-Semiconductor (AOS) Thin-Film Transistors (TFTs)
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2016-08
- 저자명 Choong-Ki Kim†, Eungtaek Kim†, Myung Keun Lee, Jun-Young Park, Myeong-Lok Seol, Hagyoul Bae, Tewook Bang, Seung-Bae Jeon, Sungwoo Jun, Sang-hee K. Park, Kyung Cheol Choi, and Yang-Kyu Choi
- 학술지명 ACS Applied Materials & Interfaces
- 발행처명 ACS Publications
- 발행국가 해외
- 논문언어 외국어
홈페이지논문 초록 (Abstract)
An electro-thermal annealing (ETA) method, which uses an electrical pulse of less than 100 ns, was developed to improve the electrical performance of array-level amorphous-oxide-semiconductor (AOS) thin-film transistors (TFTs). The practicality of the ETA method was experimentally demonstrated with transparent amorphous In–Ga–Zn-O (a-IGZO) TFTs. The overall electrical performance metrics were boosted by the proposed method: up to 205% for the trans-conductance (gm), 158% for the linear current (Ilinear), and 206% for the subthreshold swing (SS). The performance enhancement were interpreted by X-ray photoelectron microscopy (XPS), showing a reduction of oxygen vacancies in a-IGZO after the ETA. Furthermore, by virtue of the extremely short operation time (80 ns) of ETA, which neither provokes a delay of the mandatory TFTs operation such as addressing operation for the display refresh nor demands extra physical treatment, the semipermanent use of displays can be realized.