논문 해외 국제전문학술지(SCI급) "A Separate Extraction Method for Asymmetric Source and Drain Resistances Using Frequency-Dispersive C-V Characteristics in Exfoliated MoS2 FET
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2016-01
- 저자명 Hagyoul Bae†, Choong-Ki Kim†, Seung-Bae Jeon, Gwang Hyuk Shin, Eung Taek Kim, Jeong-Gyu Song, Youngjun Kim, Dong-Il Lee, Hyungjun Kim, Sung-Yool Choi, Kyung Cheol Choi, and Yang-Kyu Choi
- 학술지명 IEEE Electron Device Letters
- 발행처명 IEEE XPLORE
- 발행국가 해외
- 논문언어 외국어
홈페이지논문 초록 (Abstract)
Asymmetric source and drain (S/D) series resistances ( RS and RD ) are unavoidable in exfoliated MoS 2 field-effect transistors (EM-FETs). Through combining the capacitance–voltage ( C – V ) and current–voltage characteristics, the asymmetric RS and RD values are extracted separately. First, the frequency-dispersive C – V characteristics are analyzed in a frequency range of 0.3–10 kHz. Second, the intrinsic RS and RD values ( RS,int and RD,int) are characterized through deembedding the parasitic pad capacitances ( CPad=CS,Pad+CD,Pad) between the S/D metal and the bottom gate (G) in an overlapped region with the consideration of the structure-dependent parameters in the EM-FET. The proposed methodology is verified through comparison with the well-known channel resistance method, which is based on only the ID – VD characteristics in the linear region. Finally, RS,int and RD,int at various parasitic overlap areas are extracted separately with improved accuracy.