논문 해외 국제전문학술지(SCI급) Ultra-Fast Erase Method of SONOS Flash Memory by Instantaneous Thermal Excitation
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2015-12
- 저자명 Dae-Chul Ahn, Myeong-Lok Seol, Jae Hur, Dong-Il Moon, Byung-Hyun Lee, Jin-Woo Han, Jun-Young Park, Seung-Bae Jeon, and Yang-Kyu Choi
- 학술지명 IEEE Electron Device Letters
- 발행처명 IEEE XPLORE
- 발행국가 해외
- 논문언어 외국어
홈페이지논문 초록 (Abstract)
An ultra-fast erasing process that acts within 200 ns is demonstrated in a junctionless gate-all-around nanowire silicon-oxide–nitride-oxide–silicon device. Rapid erasing is enabled with the use of instantaneous thermal excitation (TE) through a double-ended gate structure. Charges inside the silicon nitride layer are de-trapped by Joule heating. Moreover, an in-situ self-annealing effect accompanied by the TE erase method is achieved; hence, both the tunnel oxide quality and the retention characteristics are less degraded compared with the conventional Fowler–Nordheim erase method.