논문 해외 국제전문학술지(SCI급) Chevron-type gate configuration of short channel top-contact organic thin-film transistors for large saturated drain current
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2011
- 저자명 M.-H. Kim, J.-H. Bae, W.-H. Kim, C.-M. Keum, and S.-D. Lee
- 학술지명 Journal of Physics D: Applied Physics
- 발행처명 ResearchGate
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 4
홈페이지논문 초록 (Abstract)
We demonstrate a chevron-type gate configuration of a short channel top-contact organic thin-film transistor (OTFT) showing large saturated drain current with the help of a polymeric edge support. The channel length (L) depends on the geometrical shape of the edge support which can be controlled by thermal treatment. Oblique deposition of Au onto the substrate with the edge support allows a self-defined channel length down to a submicrometre scale. The chevron-type top-contact OTFT with L = 0.8 µm exhibits a drain current per channel width as large as 80 µA mm-1 at the operating voltage of -3 V. The leakage current associated with a gate insulator AlOx is systematically investigated in a metal-insulator-metal structure and a metal-insulator-semiconductor-metal structure by varying the O2 plasma treatment and the pentacene thickness. Using the optimized gate insulator AlOx, a saturation behaviour of the output characteristic curve, low current leakage and low voltage operation are achieved in our chevron-type OTFT.