논문 해외 국제전문학술지(SCI급) Voltage-readable nonvolatile memory cell with programmable ferroelectric multistates in organic inverter configuration
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2013
- 저자명 M.-H. Kim, G.J. Lee, C.-M. Keum, and S.-D. Lee
- 학술지명 Organic Electronics
- 발행처명 ScienceDirect
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 4
홈페이지논문 초록 (Abstract)
We demonstrate a voltage-readable nonvolatile memory cell with programmable ferroelectric multistates in an organic inverter configuration. The intermediate memory states of a ferroelectric gate insulator, varying with the magnitude of the programming voltage, allow the multilevels of the drain current at zero gate-source voltage in a ferroelectric organic field-effect transistor (OFET). The current output from the ferroelectric memory is directly converted into the voltage-readable output in a zero-gate load inverter configuration where both a driving paraelectric OFET having a paraelectric buffer layer and a load ferroelectric OFET are monolithically integrated in a single substrate. The multilevel voltage-readable output characteristics are obtained from the ferroelectric multistates as a function of the programming voltage.