논문 해외 국제전문학술지(SCI급) Tailoring and patterning of dielectric interfaces for the development of advanced organic field-effect transistors
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2013
- 저자명 M.-H. Kim, C.-M. Keum, and S.-D. Lee
- 학술지명 Liquid Crystals
- 발행처명 ResearchGate
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 3
홈페이지논문 초록 (Abstract)
The progress of organic field-effect transistors (OFETs) has led to the advent of a new area of printed and/or flexible electronics. In organic transistors and circuits, the interface between a gate insulator (GI) and an organic semiconductor (OS) plays a critical role on the electrical performance together with the functionality, the reliability and the long-term stability. In this review, we describe the basic principles of engineering a variety of the GI/OS interfaces for the development of advanced OFETs from the framework of the surface morphology and the physico-chemical surface interactions. We also discuss the dielectric interface modification and the resultant device performance of the OFETs.