논문 해외 국제전문학술지(SCI급) Concept of rewritable organic ferroelectric random access memory in two lateral transistors-in-one cell architecture
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2014
- 저자명 M.-H. Kim, G. J. Lee, C.-M. Keum, and S.-D. Lee
- 학술지명 Semiconductor Science and Technology
- 발행처명 ResearchGate
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 4
홈페이지논문 초록 (Abstract)
We propose a concept of rewritable ferroelectric random access memory (RAM) with two lateral organic transistors-in-one cell architecture. Lateral integration of a paraelectric organic field-effect transistor (OFET), being a selection transistor, and a ferroelectric OFET as a memory transistor is realized using a paraelectric depolarizing layer (PDL) which is patterned on a ferroelectric insulator by transfer-printing. For the selection transistor, the key roles of the PDL are to reduce the dipolar strength and the surface roughness of the gate insulator, leading to the low memory on-off ratio and the high switching on-off current ratio. A new driving scheme preventing the crosstalk between adjacent memory cells is also demonstrated for the rewritable operation of the ferroelectric RAM.