논문 해외 국제전문학술지(SCI급) Quasi-surface emission in vertical organic light-emitting transistors with network electrode
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2014
- 저자명 C.-M. Keum, I.-H. Lee, S.-H. Lee, G.J. Lee, M.-H. Kim, and S.-D. Lee
- 학술지명 Optics Express
- 발행처명 OPTICA
- 발행국가 해외
- 논문언어 외국어
홈페이지논문 초록 (Abstract)
We demonstrate a vertical-type organic light-emitting transistor (VOLET) with a network electrode of closed topology for quasi-surface emission. In our VOLET, the spatial distribution of the surface emission depends primarily on the relative scale of the aperture in the network electrode to the characteristic length for the charge carrier recombination. Due to the closed topology in the network of the source electrode, the charge transport and the resultant carrier recombination are substantially extended from individual network boundaries toward the corresponding aperture centers in the source electrode. The luminance was found to be well-controlled by the gate voltage through an organic semiconducting layer over the network source electrode.