논문 해외 국제전문학술지(SCI급) Leakage current behavior in MIM capacitors and MISM organic capacitors with a thin AlOX insulator
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2015
- 저자명 J.-H. Kim, J.-H. Bae, and M.-H. Kim
- 학술지명 Electronic Materials Letters
- 발행처명 ResearchGate
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 3
홈페이지논문 초록 (Abstract)
This is a systematic study of how leakage current behaviors are affected according to the capacitor structures. We fabricated two types of capacitors, a metal-insulator-metal (MIM) capacitor and a metal-insulator-organic semiconductor-metal (MISM) capacitor with an ultra-thin AlOX insulator. In the MIM capacitors, the Fermi-level alignment induced by the difference of the work functions between the top and bottom electrodes leads to the polarity dependence of the leakage current features. In contrast, for the MISM organic capacitors, it is found that the type of organic semiconductor dominantly determines the characteristics of the polarity dependence. These structure-dependent differences of leakage current in a fundamental constituent of the capacitor provide a scientific platform for designing more complex devices for precise operation.