논문 해외 국제전문학술지(SCI급) Thermal stability of devices with molybdenum oxide doped organic semiconductors
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2016
- 저자명 M.-H. Kim and J.-H. Lee
- 학술지명 Organic Electronics
- 발행처명 ScienceDirect
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 2
홈페이지논문 초록 (Abstract)
We demonstrate the thermal stability of transition-metal-oxide (molybdenum oxide; MoO3)-doped organic semiconductors. Impedance spectroscopy analysis indicated that thermal deformation of the intrinsic 1,4-bis[N-(1-naphthyl)-N′-phenylamino]-4,4′-diamine (NPB) layer is facilitated when the MoO3-doped NPB layer is deposited on the intrinsic NPB layer. The resistance of the intrinsic NPB layer is reduced from 300 kΩ to 3 kΩ after thermal annealing at 100 °C for 30 min. Temperature-dependent conductance/angular frequency–frequency (G/w-f-T) analysis revealed that the doping efficiency of MoO3, which is represented by the activation energy (Ea), is reduced after the annealing process.