논문 해외 국제전문학술지(SCI급) Dependence of Bias Stress on Hydrophobicity of Gate Insulator in Solution-Processed Organic Thin-Film Transistors
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2016
- 저자명 W.-W. Noh, S.-H. Lee, G. Lee, I.-H. Lee, H.-L. Park, M.-H. Kim, and S.-D. Lee
- 학술지명 Journal of Nanoscience and Nanotechnology
- 발행처명 MDPI
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 10
홈페이지논문 초록 (Abstract)
In this paper, the effects of annealing temperature and other process parameters on spin-coated indium oxide thin film transistors (In2O3-TFTs) were studied. The research shows that plasma pretreatment of glass substrate can improve the hydrophilicity of glass substrate and stability of the spin-coating process. With Fourier transform infrared (FT-IR) and X-ray diffraction (XRD) analysis, it is found that In2O3 thin films prepared by the spin coating method are amorphous, and have little organic residue when the annealing temperature ranges from 200 to 300 °C. After optimizing process conditions with the spin-coated rotating speed of 4000 rpm and the annealing temperature of 275 °C, the performance of In2O3-TFTs is best (average mobility of 1.288 cm2·V−1·s−1, Ion/Ioff of 5.93 × 106, and SS of 0.84 V·dec−1). Finally, the stability of In2O3-TFTs prepared at different annealing temperatures was analyzed by energy band theory, and we identified that the elimination of residual hydroxyl groups was the key influencing factor. Our results provide a useful reference for high-performance metal oxide semiconductor TFTs prepared by the solution method.