논문 해외 국제전문학술지(SCI급) Roughness reduction of PVDF-TrFE insulator by reverse transfer printing for enhanced performance of ferroelectric organic memory transistors
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2017
- 저자명 J.-H. Kim, J.-H. Bae, and M.-H. Kim
- 학술지명 Journal of Nanoscience and Nanotechnology
- 발행처명 ResearchGate
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 3
홈페이지논문 초록 (Abstract)
We suggest a viable method to reduce the ferroelectric polymer surface for improved electrical performance in ferroelectric organic memory transistors. By using a reverse transfer printing (RTP) method, the surface roughness of the poly(vinylidene fluoride-co-trifluoroethylene) [P(VDF-TrFE)] film is considerably reduced to as low as 1.3 nm, which is much lower than that of the native P(VDFTrFE) film (15 nm). The mobility (2.2×10⁻² cm² V-1s⁻¹) and memory on-off ratio (3.8×102) of thin-film transistors with the RTP-processed P(VDF-TrFE) insulator were enhanced, compared with the mobility (7.3×10-3 cm² V-1s⁻¹) and memory on-off ratio (3.5×101) of nonreversed memory transistors.