논문 해외 국제전문학술지(SCI급) lexible multi-level resistive memory with high current ratio by electrical triggering into insulating layer
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2017
- 저자명 Sin-Hyung Lee, In-Ho Lee, Chang-Min Keum, Min-Hoi Kim, Chiwoo Kim, and Sin-Doo Lee
- 학술지명 Organic Electronics
- 발행처명 ScienceDirect
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 6
홈페이지논문 초록 (Abstract)
We demonstrate a flexible multi-level resistive memory device, based on the concept of electrical triggering into an insulating layer, which exhibits a high current ratio between two memory states in the unipolar mode of operation. Due to the presence of a triggering zone in unit memory cell, three resistive memory states having different domain sizes of the conductive filaments are achieved. Each memory state is readable without the disturbances by other states and the current ratio is as high as 103. The multi-level memory states are found to be well preserved during bending and applicable for constructing flexible and high-density data storage systems.