논문 해외 국제전문학술지(SCI급) Importance of Effective Surface Smoothness on the Electrical Performance of Organic Thin-Film Transistors
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2018
- 저자명 Amos Amoako Boampong, Jae-Hyun Lee, and Min-Hoi Kim
- 학술지명 Journal of Nanoscience and Nanotechnology
- 발행처명 ResearchGate
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 3
홈페이지논문 초록 (Abstract)
We presented further analysis to explain how the surface morphology influence the mobility of the organic thin film transistors with gate insulator having large undulated surface (GU-OTFTs) and introduced a new parameter in order to clearly understand the relation between surface roughness and field-effect mobility. The average of the slope between two adjacent points on the surface of a gate insulator, or effective surface smoothness (ES), was closely investigated. A smooth-contact-pressing (SCP) process affected the surface smoothness of the P(VDF-TrFE) insulator with a significant change in root-mean-square roughness (Zrms). It was found that the ES gives better explanation for the variation of the field-effect mobility of the GU-OTFTs than the Zrms.