논문 해외 국제전문학술지(SCI급) Surface engineering of ferroelectric polymer for the enhanced electrical performance of organic transistor memory
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2018
- 저자명 Do-Kyung Kim, Gyu-Jeong Lee, Jae-Hyun Lee, Min-Hoi Kim*, and Jin-Hyuk Bae
- 학술지명 Japanese Journal of Applied Physics
- 발행처명 ResearchGate
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 4
홈페이지논문 초록 (Abstract)
We suggest a viable surface control method to improve the electrical properties of organic nonvolatile memory transistors. For viable surface control, the surface of the ferroelectric insulator in the memory field-effect transistors was modified using a smooth-contact-curing process. For the modification of the ferroelectric polymer, during the curing of the ferroelectric insulators, the smooth surface of a soft elastomer contacts intimately with the ferroelectric surface. This smooth-contact-curing process reduced the surface roughness of the ferroelectric insulator without degrading its ferroelectric properties. The reduced roughness of the ferroelectric insulator increases the mobility of the organic field-effect transistor by approximately eight times, which results in a high memory on–off ratio and a low-voltage reading operation.