연구홍보포털

논문 초록 (Abstract)

Effect of the processes of polysilazane solid electrolyte layer and silver (Ag) active electrode on the electrical characteristics of memristor was investigated. The memristor with the solid electrolyte annealed at higher temperature exhibited the higher set voltage and better memory retention characteristics than that annealed at lower temperature. The increase in the set voltage and the improvement of the memory retention characteristic at high annealing temperature were attributed to a reduction in the void density and an increase in the void uniformity inside the solid electrolyte, respectively. In the case where the polysilazane solution’s concentration is high, the memristor exhibited rapid degradation of low resistive state even annealed at high temperature. Lastly, it was shown that the memristor with the solution-processed Ag active electrode showed WORM property unlike that with the vacuum-processed Ag active electrode. The WORM property was possibly due to morphological defects present in the solution-processed Ag active electrode.