논문 해외 국제전문학술지(SCI급) InP/ZnS quantum dot photoluminescence modulation via in situ H 2 S interface engineering
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2023-04-01
- 저자명 Xiang-Bing Fan, Dong-Wook Shin, Sanghyo Lee, Junzhi Ye, Shan Yu, David J Morgan, Adrees Arbab, Jiajie Yang, Jeong-Wan Jo, Yoonwoo Kim, Sung-Min Jung, Philip R Davies, Akshay Rao, Bo Hou, Jong Min Kim
- 학술지명 Nanoscale Horizons
- 발행처명 Royal Society of Chemistry
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 15
- 원문 링크 https://pubs.rsc.org/en/content/articlehtml/2023/nh/d2nh00436d
홈페이지논문 초록 (Abstract)
InP quantum dots (QDs) are attracting significant interest as a potentially less toxic alternative to Cd-based QDs in many research areas. Although InP-based core/shell QDs with excellent photoluminescence properties have been reported so far, sophisticated interface treatment to eliminate defects is often necessary. Herein, using aminophosphine as a seeding source of phosphorus, we find that H2S can be efficiently generated from the reaction between a thiol and an alkylamine at high temperatures. Apart from general comprehension that H2S acts as a S precursor, it is revealed that with core etching by H2S, the interface between InP and ZnS can be reconstructed with S2− incorporation. Such a transition layer can reduce inherent defects at the interface, resulting in significant photoluminescence (PL) enhancement. Meanwhile, the size of the InP core could be further controlled by H2S etching, which offers a feasible process to obtain wide band gap InP-based QDs with blue emission.