논문 해외 국제전문학술지(SCI급) A FULLY INTEGRATED RF CMOS FRONT-END IC FOR CONNECTIVITY APPLICATIONS
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2016-11
- 저자명 이동호
- 학술지명 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
- 발행처명 IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 3
홈페이지논문 초록 (Abstract)
A fully integrated RF CMOS front-end (FE) IC (FEIC), which is fabricated with a 0.13-mu m bulk RF CMOS process for wireless local area network/Bluetooth (WLAN/BT) applications, is presented. The proposed FEIC includes a dual-mode power amplifier (PA), int egrated switches, and a shared low-noise amplifier (LNA) without ext ernal matching networks. The proposed compact reconfigurable match ing network satisfies the optimum matchings for a multimode PA and a sha red LNA. Measurements showed a 16.2-dBm P-OUT, with a 6.7% power-adde d efficiency (PAE), at -34-dB error vector magnitude, with an 802.11ac signal source, with a high-power-mode WLAN PA. With a low-p ower-mode BT PA, it showed a 13.7-dBm P-OUT, with a 10.9% PAE, with a 2. 1+EDR signal. The shared LNA has a 14.8-dB gain and a 3.6-dB nois e figure. All the measurements were carried out, including integrated mode-change switches for time-division duplex operation without any dig ital predistortion.