논문 해외 국제전문학술지(SCI급) A MULTI-BAND CMOS POWER AMPLIFIER USING RECONFIGURABLE ADAPTIVE POWER CELL TECHNIQUE
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2016-08
- 저자명 이동호
- 학술지명 IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
- 발행처명 IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 4
홈페이지논문 초록 (Abstract)
A reconfigurable adaptive power cell configuration for a multi-band CMOS power amplifier (PA) is presented, for long-range WLAN applications. The common gate (CG) transistor of a CMOS cas code power cell consists of four differently biased 4-transistor cells to have good linearity, two of which are subsidiary cells and are t urned off to cover the higher frequency band. This allows the PA to oper ate in multi-band properly without any additional switches or path s for multi-band. The chip is fabricated in 40 nm CMOS technology , and its size including the ESD-protected pad is 1.985 x 1.61 mm(2). The measurement results show that the proposed PA achieves the output power of 27.8 (28.2) dBm with the PAE of 52% (53%) at a high (lo w) frequency band.