논문 해외 국제전문학술지(SCI급) AN X-BAND SWITCHLESS BIDIRECTIONAL GAN MMIC AMPLIFIER FOR PHASED ARRAY SYSTEMS
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2014-12
- 저자명 이동호
- 학술지명 IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
- 발행처명 IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 5
홈페이지논문 초록 (Abstract)
An X-Band switchless bidirectional amplifier (BDA) in a 0.25 mu m gallium-nitride (GaN) on SiC process is introduced. The proposed bidirectional amplifier comprises of a 1 W power amplifier (PA) and a low noise amplifier (LNA) for T/R modulesof phased array syste ms without any aid of switches. In receive mode, the BDA has flat gain of 20.2 +/- 1 db and shows wideband input matching at 8 to 12 GHz . The minimum noise figure is 4.3 dB at 10.4 GHz and below 5 dB acro ss the X-Band. In transmit mode, the small signal gain of the PA is 2 7 +/- 3 db , its P1 dB is about 27 dBm, and its saturated output power isover 30 dBm at 8 to 12 GHz. The PA consumes 220 mA of quiescent cur rent with 20 V power supply. While one mode is working, the other mode transistors are off and their parasitic capacitance has been already considered in design stage to minimize performance degradati on and leakage. The total chip size is 2.5 mm x 1.87 including pads .