논문 해외 국제전문학술지(SCI급) A DOHERTY POWER AMPLIFIER WITH A GAN MMIC FOR FEMTOCELL BASE STATIONS
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2014-03
- 저자명 이동호
- 학술지명 IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
- 발행처명 IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 3
홈페이지논문 초록 (Abstract)
A Doherty Power Amplifier (PA) with the proposed GaN MMIC for femtocell base stations is presented. The MMIC was fabricated usinga 0.25 mu m TriQuint GaN process. An on-chip quadrature coupler based on a lumped magnetic coupler with capacitors was usedto reduce the chip size. Th e MMIC with an area of 2.5 x 2.7 mm(2) includes an input matching circuit, a driver transistor, carrier and peak transistors at p ower stage, and an inter-stage matching network with the quadrature coupler. The Doherty PA with MMIC shows 56.2% power added efficiency (P AE) with a gain of 19.7 dB when the output power is 41.2 dBm for a 2.14 GHz CW signal. For a down link WCDMA signal, the PAE of 39.6% is achi eved at an output power of 35.3 dBm. The Doherty PA with the MMIC pres ented here has a small effective module area of 7 x 15 mm(2), which can be readily reduced further.