논문 해외 국제전문학술지(SCI급) Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2013-10
- 저자명 오민욱
- 학술지명 ACS NANO
- 발행처명 ACS
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 9
홈페이지논문 초록 (Abstract)
We demonstrate gate-controlled spin-orbit interaction (SOI) in InAs high-electron mobility transistor (HEMT) structures transferred epitaxially onto Si substrates. Successful epitaxial transfer of the multilayered structure after separation from an original substrate ensures that the InAs HEMT maintains a robust bonding interface and crystalline quality with a high electron mobility of 46200 cm(2)/(V s) at 77 K. Furthermore, Shubnikov-de Haas (SdH) oscillation analysis reveals that a Rashba SOI parameter (alpha) can be manipulated using a gate electric field for the purpose of spin field-effect transistor operation. An important finding is that the a value Increases by about 30% in the InAs HEMT structure that has been transferred when compared to the as-grown structure. First-principles calculations Indicate that the main causes of the large improvement in a are the bonding of the InAs HEMT active layers to a SiO2 insulating layer with a large band gap and the strain relaxation of the InAs channel layer during epitaxial transfer. The experimental results presented In this study offer a technological platform for the integration of III-V heterostructures onto Si substrates, permitting the spintronic devices to merge with standard Si circuitry and technology.