논문 해외 국제전문학술지(SCI급) Electron Transport Properties of La-Doped AgSbTe(2) Thermoelectric Compounds
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2011-09
- 저자명 오민욱
- 학술지명 ELECTRONIC MATERIALS LETTERS
- 발행처명 KOREAN INST METALS MATERIALS
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 8
홈페이지논문 초록 (Abstract)
The purpose of this paper is to investigate the doping effect of La, as a substituent against Sb, on the transport properties of the AgSbTe(2) thermoelectric compounds. The samples were fabricated by spark plasma sintering (SPS). The intended compound was Ag(Sb(1-x)La(x))Te(2), in which the doping content was x = 0 similar to 0.05. Un-doped and La-doped compounds were revealed a nearly single phase of AgSbTe(2), containing a very small amount of Ag(2)Te. With an increase in La content, the fractured surfaces of Ag(Sb(1-x)La(x))Te(2) changed from an irregular morphology to a laminar morphology, indicating a transition from ductile to brittle cleavage fracture. The Seebeck coefficient of the Ag(Sb(1-x)La(x))Te(2) compound was, as its highest value, 358 mu V/K for Ag(Sb(0.98)La(0.02))Te(2) (i.e. x = 0.02) at 150 degrees C. Electrical resistivity exhibited higher values for the compound with the value of x=0.02 than for other compounds. Power factor was higher for the doped sample (x = 0.01) than for the un-doped compound at the temperature region of 25 similar to 300 degrees C. Desirably, the carrier concentration of the Ag (Sb(1-x)La(x))Te(2) compound was optimized from 10(20)/cm(3) to 10(19)/cm(3) by La doping, regardless of doping content.