논문 해외 국제전문학술지(SCI급) A 21.4 pW Subthreshold Voltage Reference with 0.020 /V Line Sensitivity Using DIBL Compensation
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2023-02
- 저자명 Louis Colbach, Taekwang Jang, Youngwoo Ji
- 학술지명 SENSORS
- 발행처명 MDPI
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 3
홈페이지논문 초록 (Abstract)
This paper presents an ultra-low-power voltage reference designed in 180 nm CMOS technology. To achieve near-zero line sensitivity, a two-transistor (2-T) voltage reference is biased with a current source to cancel the drain-induced barrier-lowering (DIBL) effect of the 2-T core, thus improving the line sensitivity. This compensation circuit achieves a Monte-Carlo-simulated line sensitivity of 0.035 %/V in a supply range of 0.6 to 1.8 V, while generating a reference voltage of 307.8 mV, with 21.4 pW power consumption. The simulated power supply rejection ratio (PSRR) is -54 dB at 100 Hz. It also achieves a temperature coefficient of 24.8 ppm/degrees C in a temperature range of -20 to 80 degrees C, with a projected area of 0.003 mm(2).