논문 해외 국제전문학술지(SCI급) A 20.5-nW Resistor-Less Bandgap Voltage Reference With Self-Biased Compensation for Process Variations
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2022-06
- 저자명 Youngwoo Ji, Jae-Yoon Sim
- 학술지명 IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
- 발행처명 IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 2
홈페이지논문 초록 (Abstract)
This brief proposes a resistor-less bandgap reference (BGR) based on a leakage-based proportional-to-absolute-temperature (PTAT) scheme. The effect of process variations on the current is mitigated by employing self-biased current-limiting MOS transistors. The bias voltages needed for approximating a large resistance can be obtained from a single branch by placing threshold-sampling transistors on top of the BGR output. The fabricated BGR in 0.18-mu m CMOS occupies an active area of 0.035 mm(2) and consumes 20.5 nW, and it shows a standard deviation of 0.68% at untrimmed reference voltages.