논문 해외 국제전문학술지(SCI급) FABRICATION OF AL DOPED ZNO FILMS USING ATMOSPHERIC PRESSURE COLD PLASMA
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2012-11
- 저자명 김윤기
- 학술지명 THIN SOLID FILMS
- 발행처명 ELSEVIER SCIENCE SA
- 발행국가 해외
- 논문언어 외국어
홈페이지논문 초록 (Abstract)
Under atmospheric pressure, homogeneous non-equilibrium cold plasma was generated stably by high voltage pulsed power (1 kV, 20 kHz, 38 W) excitation of a mixture of He and O-2 gases produced by a dielectr ic barrier discharge setup. By feeding Bis (2 methoxy-6-methyl-3, 5-heptanedione) Zn (Zn-MOPD, C18H3O6Zn) and Tris (2-methoxy-6- methyl-3, 5-heptanedione) Al (Al-MOPD, C27H45O9Al) into this plasma with He carrier gas, transparent flat Al-doped ZnO (ZnO: Al) films abo ut 120-240 nm thick were prepared on glass substrates directly un der the slit made into the cathode. Deposition rates of the films were about 20-40 nm/min. The concentration of Al was measured by inductiv ely coupled plasma atomic emission spectroscopy. The composition r atio of Al to Zn was 7.8 mol% when the carrier He gas flow rate of Al- MOPD was 30 cm(3). The average transmittanceof all films was more than 85% in the wavelength range from 400 to 800 nm. When the composition ratio of Al/Zn was between 1.1 and 7.8 mol%, the optical band gap of t he film increased from 3.28 to 3.40 eV. The resistivity of ZnO: Al fi lm was 2.96 Omega cm at 1.3 mol% of Al/Zn. In addition, the microstr ucture of the films was studied by X-ray diffraction measurement and fi eld emission scanning electron microscope observation. It was rev ealed that doped Al is substituted onto the Zn site of the ZnO crystalli ne structure in ZnO:Al films. (C) 2012 Elsevier B.V. All rights reserved.