논문 해외 국제전문학술지(SCI급) ENHANCEMENT OF THE ELECTRICAL PERFORMANCE OF THE ORGANIC FERROELECTRIC MEMORY TRANSISTOR BY REDUCING THE SURFACE ROUGHNESS OF THE POLYMER INSULATOR WITH A HOMO-BILAYER PVDF-TRFE
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2017-08
- 저자명 이재현
- 학술지명 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- 발행처명 AMER SCIENTIFIC PUBLISHERS
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 4
홈페이지논문 초록 (Abstract)
We suggest a feasible method to enhance the electrical performance of the organic nonvolatile memory transistor by reducing thesurface roughness of the ferroelectric polymer insulator. A homobilayer o f poly(vinylidenefluoride-co-trifluoroethylene) [P(VDF-TrFE)] was u sed to control the high surface roughness of the conventional single lay er [P(VDF-TrFE)] polymer insulator. The smoothening of the polymer insulator was achieved as the Z(rms) roughness was as low as 11 .9 nm compared to the aboriginal single P(VDF-TrFE) film of 18.8 nm. The homo-bilayer P(VDF-TrFE) thin film transistor showed a higher memory on-off ratio (about 100) and mobility (2 x 9x10(-2) cm(2)v(-1 )s(-1)) compared with the native P(VDF-TrFE) with memory on-off ratio of 16 and mobility of 2.1x10(-2) cm(2)v(-1)s(-1). The underlying mechan ism for the mobility enhancement which resulted in a high on-off rati o is mainly attributed to the reduction of the surface roughness o f the ferroelectric polymer insulator.