논문 해외 국제전문학술지(SCI급) N-TYPE MOLECULAR DOPING IN ORGANIC SEMICONDUCTORS: FORMATION AND DISSOCIATION EFFICIENCIES OF A CHARGE TRANSFER COMPLEX
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2016-05
- 저자명 이재현
- 학술지명 JOURNAL OF PHYSICAL CHEMISTRY C
- 발행처명 AMER CHEMICAL SOC
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 8
홈페이지논문 초록 (Abstract)
Electrical doping is an important method in organic electronics to enhance device efficiency by controlling the Fermi level,increasi ng the conductivity, and reducing the injection barrier from the electrode. To understand the charge generation process of the dopant in doped organic semiconductors, it is important to analyze the charge transfer complex (CTC) formation and dissociation into a fre e charge carrier. In this paper, we correlate the charge generation e fficiency with the CTC formation and dissociation efficiency of an n-d opant in organic semiconductors. The CTC formation efficiency of Rb2C O3 linearly decreases from 82.8% to 47.0% as the doping concentration in creases from 2.5 to 20 mol %. The CTC formation efficiency and its l inear decrease with the doping concentration are analytically corr elated with the concentration-dependent size and number of dopant agglom erates by introducing the degree of reduced CTC formation. Lastly, the behavior of the dissociationefficiency is discussed on the basis of the picture of the statistical semiconductor theory and the frontier or bital hybridization model.