논문 해외 국제전문학술지(SCI급) EFFECT OF TRAP STATES ON THE ELECTRICAL DOPING OF ORGANIC SEMICONDUCTORS
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2014-01
- 저자명 이재현
- 학술지명 ORGANIC ELECTRONICS
- 발행처명 ELSEVIER SCIENCE BV
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 6
홈페이지논문 초록 (Abstract)
We demonstrate that direct charge transfer (CT) from trap states of host molecules to the p-dopant molecules raises the doping effect o f organic semiconductors (OS). Electrons of the trap states in 4,4'-N,N'-dicarbazolyl-biphenyl (CBP) (E-HOMO = 6.1 eV) are directly transferred to the p-dopant, 2,2'-(perfluoronaphthalene-2,6 -diylidene) dimalononitrile (F6-TCNNQ) (E-LUMO = 5.4 eV). This doping p rocess enhances the conductivity of doped OS by different ways fro m the ordinary doping mechanism of generating free hole carriers and filling trap states of doped OS. Trap density and trap energy are analysed by impedance spectroscopy and it is shown that the direct ch arge transfer from deep trap states of host to dopants enhances the hol e mobility of doped OS and the I-V characteristics of hole only devices . (C) 2013 Elsevier B.V. All rights reserved.