논문 해외 국제전문학술지(SCI급) Practical application of diffusion pathway analysis for SiC-metal reactions
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2006-06
- 저자명 J. S. Park, J. Cho, S. Yi & J. H. Perepezko
- 학술지명 Metals and Materials International
- 발행처명 SPRINGER LINK
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 3
홈페이지
논문 초록 (Abstract)
Diffusion pathway analyses and operation kinetics for SiC-/metal interface reaction have been investigated To select the materials for an interlayer between an SiC and Ni reaction couple, a constructed chemical potential diagram has been utilized. When Cr was selected as the interlayer material for the SiC/Ni diffusion couple, the reaction pathway and product phase morphology have been modified by controlling the component flux. The strategy of modifying the diffusion pathway provides insight for achieving a stable interface design and for controlling the interface morphology within a kinetic bound.