논문 해외 국제전문학술지(SCI급) Kinetic control of silicon carbide/metal reactions
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 1999-01
- 저자명 J.S. Park a,*, K. Landry a , J.H. Perepezko a
- 학술지명 Materials Science and Engineering A
- 발행처명 ELSEVIER
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 3
홈페이지
논문 초록 (Abstract)
The kinetic features governing SiC/metal reactions have been investigated to identify the operating mechanisms and diffusion characteristics. With respect to the contact metal components, the reaction characteristics were identified by two separate modes-formation of silicides and free carbon (Mode I), or formation of carbides and silicides (Mode II). The analysis was confirmed by comparing SiC/Ni and SiC/Cr reactions. The diffusion pathways for both reactions were examined in terms of a chemical potential framework. The application of the analysis has been extended to in-situ interface reactions of SiC/Cu/Ni and SiC/Cr/Ni. New reaction modes representing SiC/metal reactions are considered as well as a strategy to control the reaction pathway.