논문 해외 국제전문학술지(SCI급) Atomic layer deposition of multicomponent amorphous oxide semiconductors with sequential dosing of metal precursors
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2024-05
- 저자명 Jong Beom Ko, Sang-Hee Ko Park
- 학술지명 Materials Letters
- 발행처명 ELSEVIER
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 2
- 연구분야 공학 > 재료공학
- 원문 링크 https://doi.org/10.1016/j.matlet.2024.136297
홈페이지논문 초록 (Abstract)
Atomic layer deposition (ALD) is a suitable method for depositing amorphous oxide semiconductors (AOSs) because it has the potential for achieving high performance in complex structures owing to its excellent step coverage and atomic-scale controllability. Multicomponent AOSs are typically deposited using the ALD with a super-cycle method. In this study, multicomponent AOSs, i.e., IZO, ITO, and ITZO, were deposited using ALD by employing a sequential dosing of metal precursors. Their compositions were adjusted by varying the dose time of the indium precursor. Subsequently, we applied the IZO, ITO, and ITZO films in thin-film transistors (TFTs), which demonstrated normal transfer characteristics. The TFT containing ITZO with 73.9 at% indium exhibited a turn-on voltage of −1.01 V, subthreshold swing of 0.09 V/dec, and field-effect mobility of 35.9 cm2/(V s).