논문 해외 국제전문학술지(SCI급) Modifying subgap states with hydrogen incorporation from source/drain alloys for oxide phototransistors
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2024-01
- 저자명 Wooseok Jeong, Seong-In Cho, Sang-Hee Ko Park, Jong Beom Ko*
- 학술지명 Materials Letters
- 발행처명 ELSEVIER
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 4
- 연구분야 공학 > 재료공학
- 원문 링크 https://doi.org/10.1016/j.matlet.2023.135502
홈페이지논문 초록 (Abstract)
Phototransistors with amorphous oxide semiconductors (AOSs) have attracted considerable attention owing to their low leakage current density and process compatibility with the active array. In this study, we introduce hydrogen (H) from the source/drain electrodes to the active layer using a Ti-based alloy, specifically MoTi. The device with MoTi electrodes exhibits a more negatively shifted Von value of −3.34 V compared to the device with MoAl electrodes. The H in the oxide semiconductor passivates the oxygen vacancy states and generates additional deep states above the oxygen vacancy states. Consequently, phototransistors with MoTi electrodes demonstrate a higher photoresponse under green and blue light.