논문 해외 국제전문학술지(SCI급) Buffer Layer Engineering of Indium Oxide Based Trench TFT for Ultra High Current Driving
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2023-09
- 저자명 Youngjun Im, Seong-In Cho, Jingyu Kim, Namgyu Woo, Jong Beom Ko*, Sang-Hee Ko Park*
- 학술지명 IEEE Electron Device Letters
- 발행처명 IEEE
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 6
- 연구분야 공학 > 전자/정보통신공학
- 원문 링크 https://ieeexplore.ieee.org/document/10242102
홈페이지논문 초록 (Abstract)
Oxide thin-film transistors (TFTs) with high mobility that exceed 100 cm2/ V⋅s and appropriate turn-on voltage ( Von) are necessary to drive next-generation displays and memory devices. However, a trade-off relationship exists between mobility and Von , making it difficult to achieve both in the same oxide TFT. In this letter, we propose a buffer layer engineered trench-TFT (T-TFT) as a solution to this trade-off problem. Planar-TFT (P-TFT) with an Al2O3 buffer layer exhibits a high current level; however, its Von value is unsuitable. In contrast, P-TFT with an SiO2 buffer demonstrates a Von close to zero, although its mobility remains below 100 cm2/ V⋅s . The T-TFT, which incorporates both Al2O3 and SiO2 buffer layers, shows a high mobility of 129 cm2/ V⋅s and a suitable Von of −0.4 V, selectively utilizing the advantages of P-TFTs. Based on electrical measurements and material analyses, the active layer on each buffer layer performs a distinct role in the T-TFT; the active layer on SiO2 serves as the “ Von determiner,” owing to its low oxygen vacancy, whereas the active layer on Al2O3 enhances the mobility, through reduced electron trap sites and a smooth surface.