논문 해외 국제전문학술지(SCI급) Remarkably stable high mobility self-aligned oxide TFT by investigating the effect of oxygen plasma time during PEALD of SiO2 gate insulator
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2022-02
- 저자명 Seong-In Cho, Jong Beom Ko, Seung Hee Lee, Junsung Kim, Sang-Hee Ko Park
- 학술지명 Journal of Alloys and Compounds
- 발행처명 Elsevier
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 5
- 연구분야 공학 > 재료공학
- 원문 링크 https://doi.org/10.1016/j.jallcom.2021.162308
홈페이지논문 초록 (Abstract)
Oxide thin-film transistors (TFTs) should be manufactured with high mobility and stability based on a self-aligned top-gate structure to drive high-end displays. In this study, the effect of oxygen plasma time over one cycle of plasma-enhanced atomic layer deposition (PEALD) SiO2 on the properties of top-gate oxide TFTs was investigated systemically. The subsurface reaction of oxygen plasma causes a difference in oxygen vacancy (Vo). In addition, hydrogen incorporation also differs according to plasma time. Considering Vo and hydrogen are donors, tendency of electric properties could be explained. These surface reactions and atomic incorporation also induce differences in the positive bias temperature stress (PBTS) stability. Based on oxygen plasma time of 2.0 s, a positive shift in threshold voltage (Vth) due to interfacial degradation was observed when the plasma was longer, while an abnormal negative shift due to H+ drift was observed when it was shorter. When the oxygen plasma time is 2.0 s, the TFT was free from the deterioration of the interface and SiO2. Based on this condition, a self-aligned TFT with superior performance including a high mobility of 31.1 cm2/V s, positive Vth and high stability of 0.016 V shifting during the PBTS was fabricated successfully.