논문 해외 국제전문학술지(SCI급) Effects of Al precursors on the characteristics of indium–aluminum oxide semiconductor grown by plasma-enhanced atomic layer deposition
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2021-08
- 저자명 Seunghee Lee, Miso Kim, Geumbi Mun, Jongbeom Ko, Hye-In Yeom, Gwang-Heum Lee, Bonggeun Shong, Sang-Hee Ko Park
- 학술지명 ACS Applied Materials & Interfaces
- 발행처명 American Chemical Society
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 8
- 연구분야 공학 > 재료공학
- 원문 링크 https://doi.org/10.1021/acsami.1c11304
홈페이지논문 초록 (Abstract)
Atomic layer deposition (ALD) has attracted much attention, particularly for applications in nanoelectronics because of its atomic-level controllability and high-quality products. In this study, we developed a plasma-enhanced atomic layer deposition (PEALD) process to fabricate a homogeneous indium aluminum oxide (IAO) semiconductor film. Trimethylaluminum (TMA) and dimethylaluminum isopropoxide (DMAI) were used as Al precursors, which yielded different compositions. Density functional theory (DFT) calculations on the surface reactions between indium and aluminum precursors showed that while highly reactive TMA would etch In, DMAI with lower reactivity would allow indium to persist in the films, resulting in a more controlled doping of Al. The In/Al composition ratio could be further precisely controlled by adjusting the indium precursor dose time to sub-saturation. IAO based on DMAI was applied to fabricate thin-film transistors (TFTs), showing that Al can be a carrier suppressor of indium oxide. TFTs with PEALD IAO containing 3.8 atomic % Al showed a turn-on voltage of −0.4 ± 0.3 V, a subthreshold slope of 0.09 V/decade, and a field effect mobility of 18.9 cm2/(V s).