논문 해외 국제전문학술지(SCI급) Plasma-Enhanced Atomic Layer Deposition Processed SiO2 Gate Insulating Layer for High Mobility Top-Gate Structured Oxide Thin-Film Transistors
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2016-01
- 저자명 Jong Beom Ko, Hye In Yeom, Sang-Hee Ko Park
- 학술지명 IEEE Electron Device Letters
- 발행처명 IEEE
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 3
- 연구분야 공학 > 재료공학
- 원문 링크 https://ieeexplore.ieee.org/document/7343752
홈페이지논문 초록 (Abstract)
SiO2 processed by plasma-enhanced atomic layer deposition (PEALD) was applied as a gate insulator (GI) to the top gate high mobility InZnO (IZO) thin-film transistor (TFT). In as-fabricated devices, while IZO TFTs with GI processed by PEALD shows high ON/OFF ratio characteristics, the devices with GI deposited by plasma-enhanced chemical vapor deposition showed the conductive characteristics. From the secondary ion mass spectroscopy analysis, it is inferred that PEALD processed SiO 2 generates fewer free electron donating elements in the active layer. The IZO TFT with PEALD processed GI exhibits a high-field effect mobility of 32.9 cm 2 /V · s, VON of -0.3 V, and Δ V ON of 0.56 V under positive bias temperature stress (1 MV/cm, 60°C, 3600 s) after being subject to thermal annealing at 350°C.