논문 해외 국제전문학술지(SCI급) Data on lateral photocurrent along a Cu (In, Ga) Se2 thin film as a function of air exposure time
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2019-12
- 저자명 정중희,장지성,이상엽
- 학술지명 Data in brief
- 발행처명 Elsevier
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 3
홈페이지논문 초록 (Abstract)
Wavelength-dependent (i.e. penetration-depth-dependent) lateral photocurrent (iLP) measurement has been used to extract depth-resolved Lc profiles, where Lc is the minority carrier collection length by diffusion. The extracted Lc depth-profiles can be used to determine the minority carrier diffusion length and back-surface recombination velocity in Cu(In,Ga)Se2 (CIGS) thin film solar cells (Chung, 2019). During the measurement of iLP, the CIGS thin film is generally exposed to air. The CIGS thin films can be degraded by air exposure (Metzger et al., 2009). Therefore, it will be helpful to know the effect of air exposure time of CIGS thin films on the iLP values to properly estimate the electrical quality of CIGS thin films.