논문 해외 국제전문학술지(SCI급) Effect of photoresponsive polymer gate insulators on performance of poly(4-vinylphenol)-based organic phototransistors
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2019-07
- 저자명 김민회,Park, HL (Park, Hea-Lim),Lee, SH (Lee, Sin-Hyung),Kim, H (Kim, Hyeok)
- 학술지명 SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- 발행처명 IOP PUBLISHING LTD
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 4
홈페이지논문 초록 (Abstract)
This paper presents a comprehensive overview of how the photoresponse of crosslinked poly(4-vinylphenol) (c-PVP) influences the photosensitivity and photoresponsivity of organic phototransistors (OPTs) using four c-PVP layers with different optical energy gaps (E-g). The photoresponse of the c-PVP layers governed by the E-g is found to be a critical factor in enhancing the photosensivity and photoresponsivity of the PVP-based OPTs (P-OPTs). More specifically, the P-OPT based on a completely crosslinked insulator with a low E-g exhibits much higher photosensitivity and photoresponsivity than other P-OPTs that use a partially crosslinked gate insulating layers with relatively high E-g values. This physical approach to investigating the influence of photoresponsive gate insulators on OPTs performance provides a useful starting-point when considering how best to build high-performance photosensing systems based on organic materials.