논문 해외 국제전문학술지(SCI급) Improvement of Photoresponse in Organic Phototransistors through Bulk Effect of Photoresponsive Gate Insulators
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2020-04
- 저자명 김민회,Park, HL (Park, Hea-Lim),Kim, H (Kim, Hyeok)
- 학술지명 MATERIALS
- 발행처명 MDPI
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 3
홈페이지논문 초록 (Abstract)
In this study, we investigate the bulk effect of photoresponsive gate insulators on the photoresponse of organic phototransistors (OPTs), using OPTs with poly(4-vinylphenol) layers of two different thicknesses. For the photoresponse, the interplay between the charge accumulation (capacitance) and light-absorbance capabilities of a photoresponsive gate insulator was investigated. Although an OPT with a thicker gate insulator exhibits a lower capacitance and hence a lower accumulation capability of photogenerating charges, a thicker poly(4-vinylphenol) layer, in contrast to a thinner one, absorbs more photons to generate more electron-hole pairs, resulting in a higher photoresponse of the device. That is, in these two cases, the degree of light absorption by the photoresponsive gate insulators dominantly governed the photoresponse of the device. Our physical description of the bulk effect of photoresponsive insulators on the performance of OPTs will provide a useful guideline for designing and constructing high-performance organic-based photosensing devices and systems.